ARF521 165v, 150w, 150mhz the ARF521 is an rf power transistor designed for high voltage operation in broadband hf, narrow band ism and mri power ampli ers up to 150mhz. ? speci ed 125 volt, 81mhz characteristics: output power = 150 watts. gain = 13db (class ab) ef ciency = 50% ? high voltage breakdown and large soa for superior ruggedness. ? industry standard package ? low vth thermal coef cient symbol parameter ARF521 unit v dss drain-source voltage 500 v i d continuous drain current @ t c = 25c 10 a v gs gate-source voltage 30 v p d total device dissipation @ t c = 25c 250 w t j , t stg operating and storage junction temperature range -55 to 175 c t l lead temperature: 0.063? from case for 10 sec. 300 maximum ratings all ratings: t c =25 c unless otherwise speci ed static electrical characteristics symbol parameter min typ max unit v (br)dss drain-source breakdown voltage (v gs = 0v, i d = 250 a) 500 v v ds(on) drain-source on-state resistance 1 (i d(on) = 5a, v gs = 10v) 0.56 0.8 i dss zero gate voltage drain current (v ds = v dss , v gs = 0v) 25 a zero gate voltage drain current (v ds = 50v, v gs = 0, t c = 125c) 250 i gss gate-source leakage current (v ds = 30v, v ds = 0v) 100 na g fs forward transconductance (v ds = 15v, i d = 5a) 3 3.6 mhos v gs(th) gate threshold voltage (v ds = v gs , i d = 200ma) 2 4 volts microsemi website - http://www.microsemi.com 050-4930 rev b 8-2007 thermal characteristics symbol characteristic min typ max unit r jc junction to case thermal resistance 0.60 c/w r cs case to sink (use high ef ciency thermal joint compound and planar heat sink surface.) 0.1 caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. rf power mosfet n-channel enhancement mode
ARF521 dynamic characteristics symbol parameter test conditions min typ max unit c iss input capacitance v gs = 0v 780 900 pf c oss output capacitance v ds = 50v 125 150 c rss reverse transfer capacitance f = 1mhz 7 10 t d(on) turn-on delay time v gs = 15v v dd = 0.5v dss i d =i d[cont.] @ 25c r g = 1.6w 5.1 10 ns t r rise time 4.1 8 t d(off) turn-off delay time 12 18 t f fall time 4.0 7 functional characteristics symbol characteristic test conditions min typ max unit g ps common source ampli er power gain f = 81mhz i dq = 50ma v dd = 125v p out = 150w 14 15 db h drain ef ciency 50 55 % y electrical ruggedness vswr 5:1 no degradation in output power 1. pulse test: pulse width < 380 s, duty cycle < 2%. microsemi reserves the right to change, without notice, the speci cations and information contained herein. 050-4930 rev b 8-2007 gain (db) frequency (mhz) figure 1, typical gain vs. frequency 25 20 15 10 0 25 50 75 100 125 150 class ab v dd = 125v p out = 150w 1 5 10 50 100 500 i d , drain current (amperes) v ds , drain-to-source voltage (volts) figure 4, typical maximum safe operating area t c =+25c t j =+175c single pulse 40 10 5 1 .5 .1 1ms 10ms 100us operation here limited by r ds (on) dc 100ms capacitance (pf) v ds , drain-to-source voltage (volts) figure 2, typical capacitance vs. drain-to-source voltage 3000 1000 500 100 50 10 1 .1 1 10 100 200 c iss c oss c rss 30 25 20 15 10 5 0 0 2 4 6 8 10 v gs , gate-to-source voltage (volts) figure 3, typical transfer characteristics i d , drain current (amperes) v ds > i d (on) x r ds (on)max. 250 sec. pulse test @ <0.5 % duty cycle t j = -55c t j = -55c t j = +125c t j = +25c
ARF521 050-4930 rev b 8-2007 v ds , drain-to-source voltage (volts) figure 6, typical output characteristics 0 5 10 15 20 25 30 i d , drain current (amperes) 9v 7v 8v 12v 10v 11v 30 25 20 15 10 5 0 single pulse 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 rectangular pulse duration (seconds) figure 7a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 0.5 0.1 0.3 0.7 0.05 d = 0.9 t c , case temperature (c) figure 5, typical threshold voltage vs temperature 1.10 1.05 1.00 0.95 0.90 -50 -25 0 25 50 75 100 125 150 v gs(th) , threshold voltage (normalized) figure 7b, transient thermal impedance model 0.256 0.213 0.131 0.00496f 0.0590f 0.635f transient thermal impedance rc model dissipated power (watts) t j (c) t c (c) z ext are the external thermal impedances: case to sink, sink to ambient, etc. set to zero when modeling only the case to junction. z ext table 1 - typical class ab large signal input - output impedance freq. (mhz) z in ( )z ol ( ) 2.0 13.5 27 40 65 80 100 24 - j 4.5 8.3 - j 11.6 2.5 - j 7.1 1.0 - j 4.2 .30 - j 1.1 .25 + j 0.3 .35 + j 1.6 55 - j 4 45 - j 22 28.7 - j 28 17.9 - j 26 9.0 - j 20.6 5.8 - j 17 4 - j 14.2 z in - gate shunted with 25 i dq = 50ma z ol - conjugate of optimum load for 150 watts output at v dd =125v
ARF521 050-4930 rev b 8-2007 microsemi?s products are covered by one or more of u.s. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,5 03,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 and foreign patents. us and foreign patents pending. all rights res erved. ARF521 test fixture 2-22-02 rf gate bias vdd power l1 c1 c3 c4 c5 c2 c13 r2 r3 r1 dut l2 l3 c6 c12 c9 c10 c11 l4 +125v rf output rf input c1 - arco 406 mica trimmer c2 - 220pf semco metal clad c3 - arco 464 mica trimmer c4 - 820pf atc 700b c5- 1000pf atc 700b c6 - arco 463 mica trimmer c7-c10 10nf 500v chip c11-c13 1nf npo 500v tl1 - .23" x 1.5" stripline l1 -- 2t #18 .3" id .2"l ~50nh l2 -- 3t #16 awg .31" id .3"l ~65nh l3 -- 10t #22 awg .25 id ~470nh l4 -- vk200-4b ferrite choke ~3uh r1-r3 -- 1k ohm 1/4w carbon dut = ARF521 bias 0 - 12v c7 c8 tl1 ARF521 test circuit 81.36 mhz a u m m q r b 1 4 3 2 d k e seating plane c j h pin 1 - source pin 2 - gate pin 3 - source pin 4 - drain m174 package outline .5? soe dim inches millimeters min max min max a 0.096 0.990 24.39 25.14 b 0.465 0.510 11.82 12.95 c 0.229 0.275 5.82 6.98 d 0.216 0.235 5.49 5.96 e 0.084 0.110 2.14 2.79 h 0.144 0.178 3.66 4.52 j 0.003 0.007 0.08 0.17 k 0.435 11.0 m 45 nom 45 nom q 0.115 0.130 2.93 3.30 r 0.246 0.255 6.25 6.47 u 0.720 0.730 18.29 18.54
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